Диссертация на соискание ученой степени кандидата физико-математических наук (стр. 23 )

12 J. Wu, W. Shan, and W. Walukiewicz / Band anticrossing in highly mismatched III–V semiconductor alloys // Semicond. Sci. Technol. Vol. 17. P. 860-869 (2002).

13 W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. F. Geisz, et al. / Band Anticrossing in GaInNAs Alloys // Phys. Rev. Lett. Vol. 82, № 6. P. 1221-1224 (1999).

14 J. W. Ager III and W. Walukiewicz / Current status of research and development of III–N–V semiconductor alloys // Semicond. Sci. Technol. Vol. 17. P. 741-745 (2002).

15 W. Walukiewicz / Narrow band gap group III-nitride alloys // Physica E. Vol. 20. P. 300-307 (2004).

16 J. Wu, W. Walukiewicz and E. E. Haller / Band structure of highly mismatched semiconductor alloys: Coherent potential approximation // Phys. Rev. B. Vol. 65. 233210 (2002).

17 W. Shan, K. M. Yu, W. Walukiewicz, E. E. Haller, M. C. Ridgway, et al. / Reduction of the band-gap energy in GaNAs and AlGaNAs synthesized by N+ implantation // Appl. Phys. Lett. Vol. 75, № 10. P. 1410-1412 (1999).

18 C. Skierbiszewski, P. Perlin, P. Wisniewski, W. Walukiewicz, W. Shan, and J. F. Geisz, et al. / Large, nitrogen-induced increase of the electron effective mass in InyGa1–yNxAs1–x // Appl. Phys. Lett. Vol. 76, № 17. P. 2409-2412 (2000).

19 K. M. Yu, W. Walukiewicz, W. Shan, E. E. Haller, J. F. Geisz, D. J. Friedman, et al. / Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys // Phys. Rev. B. Vol. 61, № 20, P. R13 337- R13 339 (2000).

20 W. Shan, W. Walukiewicz, K. M. Yu, E. E. Haller, H. P. Xin, et al. / Nature of the fundamental band gap in GaNxP1-x alloys // Appl. Phys. Lett. Vol. 76, № 22. P. 3251-3253 (2000).

21 J. D. Perkins, A. Mascarenhas, J. F. Geisz, D. J. Friedman, et al. / Nitrogen- Activated transitions, level repulsion, and band gap reduction in GaAs1-xNx with x < 0,03 // Phys. Rev. Lett. Vol. 82, № 16. P. 3312-3315 (1999).

22 K. M. Yu, W. Walukiewicz, J. Wu, I. Mitkowski, P. Becla, et al. / Band anticrossing in group II-Ox-VI1-x highly mismatched alloys: Cd1-yMnyOxTe1-x quaternaries synthesized by O ion implantation // Appl. Phys. Lett. Vol. 80, № 9. P. 1571-1573 (2002).

23 W. Shan, K. M. Yu, W. Walukiewicz, J. W. Beeman, et al. / Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloys // Appl. Phys. Lett. Vol. 84, № 6. P. 924-926 (2004).

24 W. Shan, W. Walukiewicz, K. M. Yu, E. E. Haller, Y. Nabetani, et al. / Effect of oxygen on the electronic band structure in ZnOxSe1-x alloys // Appl. Phys. Lett. Vol. 83, № 2. P. 299-301 (2003).

25 Y. Nabetani, T. Mukawa, Y. Ito, T. Kato and T. Matsumoto / Epitaxial growth and large band-gap bowing of ZnSeO alloy // Appl. Phys. Lett. Vol. 83, № 6. P. 1148-1150 (2003).

26 J. Jansinski, K. M. Yu, W. Walukiewicz, J. Washburn, et al. / Influence of microstructure on electrical properties of diluted GaNxAs1-x formed by nitrogen implantation // Appl. Phys. Lett. Vol. 79, № 7. P. 931-933 (2001).

27 K. Uesugi, N. Marooka and emune / Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements // Appl. Phys. Lett. Vol. 74, № 9. P. 1254-1257 (1999).

28 B. M. Keyes, J. F. Geisz, P. C. Dippo, R. Reedy, C. Kramer, et al. / Optical Investigation of GaNAs // AIP Conference Proceedings 462. Woodbury, NY: American Institute of Physics. P. 511-516 (1999).

29 L. Malikova, F. H. Pollak and R. Bhat / Composition and temperature dependence of the direct band gap of GaAs1-xNx (x ≤ 0,0232) using contactless electroreflectance // J. Electron. Mater. Vol. 27, № 5. P. 484-487 (1998).

30 R. Bhat, C. Caneau, L. Salamanca-Riba, W. Bi, C. Tu / Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition // J. Crystal Growth. Vol. 195, № 1-4. P. 427-437 (1998).

31 P. W. Anderson / Localized Magnetic States in Metals // Phys. Rev. Vol. 124. P. 41-53 (1961).

32 A. N. Kocharian / Change of valence in rare earth semiconductors in the multiimpurity Anderson model / Sov. Phys. Solid State. Vol. 28. P. 6-10 (1986).

33 A. Lindsay, E. P. O`Reilly / Theory of enhanced bandgap non-parabolicity in GaNAs and related alloys // Sol. m. Vol. 112. P. 443-447 (1999).

34 P. Perlin, P. Wisniewski, bramanya, Dan E. Mars, W. Walukiewicz, et al. / Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01 // Appl. Phys. Lett. Vol. 76, № 10. P. 1279-1281 (2000).

35 K. M. Yu, W. Walukiewicz, J. Wu, W. Shan, et al. / Diluted II-VI Oxide Semiconductors with Multiple Band Gaps // Phys. Rev. Lett. Vol. 91, № 24. 246403 (2003).

36 W. Shan, W. Walukiewicz, E. E. Haller, J. F. Geisz, C. Nauka, et al. / Effect of nitrogen on the electronic band structure of group III-N-V alloys // Phys. Rev. B. Vol. 62, № 7. P. 4211-4214 (2000).

37 W. Shan, K. M. Yu, W. Walukiewicz, J. Wu, J. W. Ager III and E. E. Haller / Band anticrossing in dilute nitrides // J. Phys: Condens. Matter. Vol. 16. P. S3355-S3372 (2004).

38 W. Walukiewicz et al., in Proceedings of the 195th meeting of the electrochemical society (The Electrochemical society, Inc., Pennington NJ) Vol. 99-11. P. 190-199 (1999).

39 D. G. Thomas, J. J. Hopfield and C. J. Frosch / Isoelectronic Traps Due to Nitrogen in Gallium Phosphide // Phys. Rev. Lett. Vol. 15. P. 857-860 (1965).

40 D. G. Thomas and J. J. Hopfield / Isoelectronic Traps Due to Nitrogen in Gallium Phosphide // Phys. Rev. Vol. 150. P. 680-689 (1966).

41 J. D. Cuthbert and D. G. Thomas / Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTe // Phys. Rev. Vol. 154. P. 763-771 (1967).

42 J. J. Hopfield, D. G. Thomas and R. T. Lynch / Isoelectronic Donors and Acceptors // Phys. Rev. Lett. Vol. 17. P. 312-315 (1966).

43 J. W. Allen / Isoelectronic impurities in semiconductors: a survey of binding mechanisms // J. Phys. C. Vol. 4. P. 1936-1944 (1971).

44 J. C. Phillips / Cancelation Theorem for Isoelectronic Impurity Binding Energies // Phys. Rev. Lett. Vol. 22. P. 285-287 (1969).

45 J. Wu W. Walukiewicz, K. M. Yu, and J. W. Ager III W. Shan E. E. Haller, et al. / Band anticrossing effects in MgyZn1-yTe1-xSex alloys // Appl. Phys. Lett. Vol. 80, № 1. P. 34-36 (2002).

46 K. P. Tchakpele and J. P. Albert / Excitons Bound to Te Impurities in CdS, ZnS, and Their Mixed Compounds with Wurtzite Structure // Phys. Status Solidi B. Vol. 149, № 2. P. 641-648 (1988).

47 W. Walukiewicz, W. Shan, K. M. Yu, M. J. Seong, H. Alawadhi, A. K. Ramdas / Interaction of localized electronic states with the conduction band: band anticrossing in II-VI semiconductor ternaries // Phys. Rev. Lett. Vol. 85, № 7. P. 1552-1555 (2000).

48 M. J. Seong, H. Alawadhi, I. Miotkowski, A. K. Ramdas and S. Miotkowska / The anomalous variation of band gap with alloy composition: cation vs anion substitution in ZnTe // Sol. mun. Vol. 112, № 6. P. 329-334 (1999).

49 M. J. Seong, H. Alawadhi, I. Miotkowski, A. K. Ramdas and S. Miotkowska / Role of electronegativity in semiconductors: Isoelectronic S, Se, and O in ZnTe // Phys. Rev. B. Vol. 62, № 3, P. 1866-1872 (2000).

50 G. W. Iseler and A. J. Strauss / Photoluminescence due to isoelectronic oxygen and tellurium traps in II-IV alloys // J. Lum. Vol. 3. P. 1-17 (1970).

51 , / Изоэлектронные примеси в полупроводниках. Состояние проблемы. // ФТП. Т. 18, в. 8. С. 1345-1362 (1984).

52 M. J. Seong, H. Alawadhi, I. Miotkowski, A. K. Ramdas and S. Miotkowska / Oxygen isoelectronic impurity in ZnSxTe1-x // Phys. Rev. B. Vol. 60, № 24, P. R16 275-R16 278 (1999).

53 emune, K. Uesugi and W. Walukiewicz / Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs // Appl. Phys. Lett. Vol. 77, № 19. P. 3021-3023 (2000).

54 K. M. Yu, W. Walukiewicz, W. Shan, J. F.Geisz, M. C. Ridgway, et al. / Nitrogen-induced enhancement of free electron concentration in sulfur implanted GaNxAs1-x // Appl. Phys. Lett. Vol. 77, № 18. P. 2858-2860 (2000).

55 J. Wu, W. Walukiewicz, K. M. Yu, I. Mitkowski, A. K. Ramdas, Ching-Hua Su, et al. / Composition dependence of the hydrostatic pressure coefficients of the bandgap of ZnSe1-xTex allos // Phys. Rev. B. Vol. 68. 033206 (2003).

56 A. Lindsay and E. P. O’Reilly / Influence of nitrogen resonant states on the electronic structure of GaNxAs1-x // Sol. m. Vol. 118. P. 313-317 (2001).

57 J. L. Merz / Isoelectronic Oxygen Trap in ZnTe // Phys. Rev. Vol. 176, № 3. P. 961-968 (1968).

58 R. E. Dietz, D. G. Thomas and J. J. Hopfield / "Mirror" Absorption and Fluorescence in ZnTe // Phys. Rev. Lett. Vol. 8, № 10. P. 391-393 (1962).

59 Jingbo Li and Su-Huai Wei / Alignment of isovalent impurity levels: Oxygen impurity in II-VI semiconductors // Phys. Rev. B. Vol. 73. 041201 (2006).

60 J. Wu, W. Walukiewicz, K. M. Yu, E. E. Haller, et al. / Origin of the band-gap bowing in highly mismatched semiconductor alloys // Phys. Rev. B. Vol. 67. 035207 (2003).

61 J. Wu, W. Walukiewicz, K. M. Yu, J. D. Denlinger, et al. / Valence band hybridization in N-rich GaN1-xAsx alloys // Phys. Rev. B. Vol. 70. 115214 (2004).

62 P. R.C. Kent and A. Zunger / Theory of electronic structure evolution in GaAsN and GaPN alloys // Phys. Rev. B. Vol. 64. 115208 (2001).

63 J. Endicott, A. Patane, M. Hopkinson, R. Airey, et al. / Magnetotunneling spectroscopy of dilute Ga(AsN) quantum wells // Phys. Rev. Lett. Vol. 91, № 12. 126802 (2003).

64 A. Patane, J. Endicott, S. B. Healy, A. Lindsay, M. Hopkinson, et al. / Breakup of the conduction band structure of dilute GaAs1-yNy alloys // Phys. Rev. B. Vol. 71. 195307 (2005).

65 P. J. Klar, H. Gruning, W. Heimbrodt, J. Koch, F. Hohnsdorf, W. Stolz, et al. / From N isoelectronic impurities to N-induced bands in the GaNxAs1-x alloy // Appl. Phys. Lett. Vol. 76. P. 3439-3442 (2000).

66 Klar, P. J., Gruning, H., Heimbrodt, W., Weiser, G., Koch, O’Reilly, E. P., Hofmann, et al. / Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In)(N, As) // Semicond. Sci. Technol. Vol. 17. P. 830-842 (2002).